PART |
Description |
Maker |
U634H256 U634H256D1A25 U634H256D1A25G1 U634H256D1A |
POWERSTORE 32K X 8 NVSRAM POWERSTORE 32K的8非易失性SRAM
|
Zentrum Mikroelektronik... ZMD Zentrum Mikroelektronik Dresden GmbH ETC[ETC] Zentrum Mikroelektronik Dresden AG Electronic Theatre Controls, Inc.
|
U632H16 |
PowerStore 2K x 8 nvSRAM PowerStore 2K × 8非易
|
Electronic Theatre Controls, Inc.
|
U632H64 |
PowerStore 8K x 8 nvSRAM
|
Electronic Theatre Controls, Inc.
|
U632H64 |
PowerStore 8K x 8 nvSRAM
|
List of Unclassifed Manufacturers ETC[ETC]
|
U632H16 U632H16S2C25G1 U632H16S2K25G1 |
PowerStore 2K x 8 nvSRAM
|
Simtek Corporation
|
UL635H256SC45G1 |
Low Voltage PowerStore 32K x 8 nvSRAM 低压PowerStore 32K的8非易
|
Electronic Theatre Controls, Inc.
|
UL634H256SA35G1 |
Low Voltage PowerStore 32K x 8 nvSRAM 低压PowerStore 32K的8非易
|
Electronic Theatre Controls, Inc.
|
CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
STK11C48 STK11C48-N25 STK11C48-N25I STK11C48-N35 S |
2K x 8 nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM 2K x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM 2K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
|
SIMTEK[Simtek Corporation]
|
STK11C88-3WF45I STK11C88-3 STK11C88-3N25 STK11C88- |
32K X 8 NON-VOLATILE SRAM, 45 ns, PDIP28 32K X 8 NON-VOLATILE SRAM, 55 ns, PDIP28 32K x 8 nvSRAM 3.3V QuantumTrap⑩ CMOS Nonvolatile Static RAM 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM 32K x 8 nvSRAM 3.3V QuantumTrap?/a> CMOS Nonvolatile Static RAM
|
SIMTEK[Simtek Corporation]
|
U630H16 U630H16D1A25 U630H16D1A25G1 U630H16D1A35 |
HARDSTORE 2K X 8 NVSRAM
|
ETC
|